The two giant companies have announced innovative technology to store information without the need for transistors, which threatens to turn both the flash and the flash Memories The DRAM is obsolete, already within a year from now
More than once we have heard announcements about technologies in the past memory Breakthroughs that will improve our capabilities dozens of times and without any negative consequences. However, the name behind this announcement is a pair of giant companies that make chips memory Massively as part of a journal routine (and not an obscure startup or research group from one or another university) - this is a significant change. And that's exactly what we get today.
Intel and Micron, the two giant American companies that are partners in a project to manufacture flash chips NAND, Unveiled a new non-volatile memory technology called 3D Xpoint, which claims to offer latency times that are only one-thousandth of what we've ever known,NAND (Ie, data which are very close to those of Memories DRAM), with a life span of more than 1,000 than current DRAM chips, and exceptionally large 3-D compression. In short, the best of all worlds.
The great uniqueness of the3D Xpoint Is that there is no "capture" of electrons here to store digital information on the medium - there are no transistors here, in fact, but a two-way interweaving of conductors (called Bit Lines and Word Lines), including material that changes its physical properties when operating a differential Potential fits in with its edges, and the difference between situations is that it defines whether it is a binary of '0' or binary of '1', enabling actual information to be stored.
This essential change in the arithmetic enables each memory cell to be accessed separately, thus enabling the tremendous improvement in the time of stay (and performance, as a direct derivative) that Intel and Micron speak of.
According to the basic description of the technology, we hypothesized that this is a three-dimensional upgrade of the Phase Change Memory technology in the development of a micron deal, in which the operation of the voltage allows changing the atomic structure of a Mamorphic silica element to crystalline (from messengers to regular) storage The information, but Intel has stated in the framework meeting Journalists about the announcement that this is not about PCM technology.
Therefore, our second assessment is that it was here then Technology From the RRAM family, or ReRAM (Resistive Random Access Memory), where a difference in potentials on dielectric oxide creates oxygen atoms that significantly change the resistance of the material to allow the difference between '0' and '1' modes for information retention - When Intel may be using one of the oxides that it has researched and developed in its processor manufacturing business - hafnium oxide, for example.
Beyond the fascinating and groundbreaking technology that lies beneath the surface, the punch line is that the first 3D Xpoint memories are not found in the laboratory at a single prototype level, but in mass production preparations with an impressive 128 gigabit storage capacity per chip - and should be available as early as next year.
Intel and Micron introduced a Xpoint chip wafer that creates 20 nm lithography at a joint venture of the two companies in Utah, USA, with 128 gigabyte storage capacity allowing them to be competitive and equivalent to the chipsetNAND We are already familiar with their first generation - hence, naturally, the volume and compression of the chips3D Xpoint Will only grow. It's a little hard to believe this whole thing that pops out of nowhere, but as mentioned - when two of the most significant chip makers in the market say something like this bombastic, chances are it's not just a buzz of content.
We will continue to follow with interest one of the most intriguing announcements in the world of hardware recently, and we will update you accordingly, of course.
- Source for News 1
- Source for News 2
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