The Korean giant is taking advantage of its lead in the chip world to announce mass production for ever more agile graphic memories
A few weeks after we began to fantasize about the improvements they would bring Memories of the GDDR6, With effective 450 GB bandwidths per second for mid-market tickets and almost 1,000 GB per second at the seemingly high end - comes as a reminder to remind us that the entire GDDR world is still a remnant of the past, trying to get the pace of The new star in town.
The new star is called HBM, or HBM2 to be precise, and has become more relevant than ever at the CES 2018 exhibition with the announcement of The Kaby Lake-G processors Which include cores Radeon Vega Structured and advanced memories of this kind, as well as announcing processors Vega Graphics for the Mobile Market - When it is not exaggerated to declare that much of the graphics cards for the high market and possibly even the medium market will soon contain this device, which can already reach up to a monstrous bandwidth of terabytes per second.
Samsung is not satisfied with the latest state of the art, and announces the start of mass production for a new generation of HBM2 chips, which bring even more impressive 2.4 gigabit per second performance per pin in the ultra-wide 1,024 bit interface of this standard (compared with 2 max) Gigabit per second to date), under a modest basic workload of 1.2 volts and with an increased storage density that allows for a total volume of 8 gigabytes per chassis Memories. The end result of all this is the effective bandwidth of 307 gigabytes per second per package, when we already know that it is possible to combine two to four Enclosures Ones with a single processing core - which means we can get graphical processing cores with volume soon memory Dedicated 32 gigabytes, and an impressive bandwidth of over 1.2 terabytes per second.
All of this is certainly impressive, though it is worth noting that this is just an interim development, on the way to the arrival of the HBM3 memoir generation - perhaps as early as next year. These memories are expected to be another huge leap forward, with support for larger volumes up to 64 gigabytes (!), A "much lower" working voltage than HBM1.2 generation 2 volts, and essentially doubling the effective bandwidth for all Such a memory structure for 512 gigabytes per second, 2 times the base of HBM2 and 66 percent more than the innovative memories of סמסונג. With an array of four buildings Memories On the chip we will reach an imaginary bandwidth of 2 terabytes in a second (!), And if we look at arrays of six or eight structures this figure can reach 4 terabytes in a second - crazy.