The technology for connecting layers of flash chips through silicon itself is beginning to take shape in the commercial world and will help us get drives SSD More economical and faster, in increased volumes
This past month has provided us with quite a few meaningful and exciting announcements in the field of storage, from futuristic 3D Xpoint technology to the monstrous (and floating) 16 terabyte סמסונג. is also Toshiba And her good partner SanDisk took part in the party with the announcement of chips 3D With an improved volume of 256 gigabytes each, which will appear within a few months - and also with another intriguing announcement that promises us a significant improvement even in the world of the good old level chips.
We already knew about Through Silicon Via (TSV) technology several years ago as what will allow more and more chips to be stacked on top of each other in a single package, and while improving most of the physical and electrical properties. However, we already know that often the gap between the posters And a practical commercial application is great - and even in this case the first time we really got to know the technology was a few months ago, with the launch ofRadeon Fury X, which implemented the TSV technology on chips memory The innovative HBM.
Toshiba is also announcing plans to begin implementing TSV technology for flash drives to drives storage.
Make sure that every package you see today on the USB driveSSD Yours or even your smartphone or tablet actually includes several layers of chips, but these are all connected to the bottom base layer (which is connected to the rest of the system components) from the sides only. TSV technology makes it possible to abandon the inconvenient side connection in favor of connecting all the chips down directly - through the chips.
This method significantly shortens the distance the electronic signals are required to travel and allows for the creation of many more interfaces to the base layer (imagine it as a personal elevator in every room in the house, compared to stairs located in both corners of the building), giving lower working voltage and declared savings of up to 50 Percentage of power consumption, along with improved residence times and effective bandwidths for the elements that make up the storage drive.
Toshiba will use the new technology to create Enclosures Eight or sixteen layers, which will be translated into total capacities of 128 GB and 256 GB respectively (based on planar 128 GB chips in an up-to-date production process of 15 nanometers). Beyond the improvements mentioned in the previous paragraph, 256GB enclosures will be able to make 2TB drives a common new standard in 2.5-inch product series for home consumers - and may also allow us to see 256GB volumes on most smartphones and tablets. The cases on a single case that sits on top of its storage controller in a PoP configuration.
Using a TSV should enable stacking of more chips in each chassis and chassis so that with 24 or 32 layers of chips we can see volumes storage Higher than ever in all the computers and devices around us, regardless of the development of the field of XNUMXD chips - which will also benefit from TSV's application down the road, by the way, since these are complementary technologies (even three-dimensional chips are stacked in packages).
There is no doubt that theNAND Does not stop even for a moment - it's good that way.