The technology for connecting layers of flash chips through silicon itself is beginning to take shape in the commercial world and will help us get drives SSD More economical and faster, in increased volumes
This past month has provided us with quite a few meaningful and exciting announcements in the field of storage, from futuristic 3D Xpoint technology to the monstrous (and floating) 16 terabyte סמסונג. is also Toshiba And her good partner SanDisk took part in the party with the announcement of chips 3D With enhanced volume of 256 gigabytes each to appear in a few months - and with another intriguing announcement that promises us a significant improvement even within the good old planar chip world.
We already knew the Through Silicon Via (RSV) technology a few years ago as enabling more and more chips to stack one on the other in a single case, while improving most of the physical and electrical characteristics. However, we already know that the gap between announcements often And a practical commercial application is great - and in this case, too, the first time we got to know technology really was a few months ago, with the launch of theRadeon Fury X, which implemented the TSV technology on chips memory The innovative HBM.
Toshiba is also announcing plans to begin implementing TSV technology for flash drives to drives storage.
Make sure that every package you see today on the USB driveSSD Your or even your smartphone or tablet actually has several layers of chips in it, but these are all connected to the bottom base layer (which is linked to the other system components) from the sides only. TSV technology allows you to abandon the inconvenient side connection for all chips down directly - through the chips.
This method significantly shortens the distance required by the electronic signals to pass and enables the creation of many more interfaces to the base layer (imagine this as a personal elevator in every room in the house, compared with stairs located in both corners of the building), providing lower working voltage and a declared saving of up to 50 Percent of power consumption, along with improved latency and bandwidth for the elements that make up the storage drive.
Toshiba will use the new technology to create Enclosures Eight or sixteen layers, which will translate into 128 gigabytes and 256 gigabytes respectively (based on 128 gigabytes planar in a recent 15 nm production process). In addition to the improvements mentioned in the previous paragraph, 256 gigabytes can transform 2 terabytes into a new common standard in 2.5 inch series for home consumers - and may also allow us to see 256 gigabytes on smartphones and tablets, tablets and tablets The cases on a single case that sits on top of its PoP storage controller.
Source: custompcreview.com
Using a TSV should enable stacking of more chips in each chassis and chassis so that with 24 or 32 layers of chips we can see volumes storage Higher than ever on all computers and devices around us, regardless of the development of the 3D chip field - which will also benefit from downstream TSV application, incidentally, since these are complementary technologies (3D chips also stack in chassis).
There is no doubt that theNAND Not even stopping for a moment - well, that's how it was.
More links
- Source of knowledge
- Equal but different: Radeon Fury X musk and gets positive reviews
- The Radeon Fury in Reviews: Life and Death in the Hand of Haste
- Micron will create a standard for 3D memories
- IBM chip tower and 3M
- Samsung is unveiling a SSD of 16 terabyte
let it be !
Every day a new article about breakthroughs in the field but still drive at a reasonable speed at a basic size of 250 Giga starts at NIS 600.
Not unattainable but prices are too high.
Just a pity that prices are high, not feasible at all.