Korean - Japanese cooperation will bring us a new and advanced generation of Memories R.A.M?
Toshiba, the Japanese giant, and Hynix, the South Korean semiconductor manufacturer, Signed A cooperation agreement in the development of a new generation of Memories RAM - or STT-MRAM for you (Spin-Transfer Torque Magnetoresistance Random Access Memory).
It is a technology that may replace both DRAM and NAND flash memories in the future, and is in fact a competitor to technology The Phase Change Memory Increase We wrote Quite a few Previously.
"MRAM memories are a rare gem full of impressive features such as extremely high speed, large volume and low power consumption, and they will be a key factor in the development of the field of memories, and will also serve as a perfect response to market demand for more advanced devices, such as Smartphones And the like, "said Oh Chul Kwon, CEO of Hynix.
|a building memory MRAM, from Development של IBM And Toshiba|
Similar to Phase Change technology, MRAM technology relies on the quantum properties of atoms (their spin) to store information, opening the door to the ability to access each bit individually, rather than blocks of information - creating extremely high access speeds, and latency ( Latency) lower.
Memories of MRAM are still lagging far behind today's mainstream technology in front of volume and data density, although it is estimated that the scaling of these memories can be scaled up quickly and reliably.
The two semiconductor manufacturers plan to launch a joint venture for the production of memories at the end of the development phase, as well as the joint use of patents and the provision of components between the two, formulated in 2007.
Hard to impossible to assess which Technology Atidit will become a common name in all of us and what will disappear as if it never existed (and perhaps there is room for both?), But the future of the memories sounds interesting and promising very much.