SK Hynix of Korea joins rival Samsung, and announces ultra-fast memories for smart devices in the UFS 2.0 standard. Prepare for the performance of theSSD, Not just the Galaxy S6
The Galaxy S6 brought with it a number of important and impressive technological innovations, and while all the reminders are chip God-14 nm The economical writer and concave screen on both sides of the S6 Edge, an equally important resurgence also took place underground, with the built-in storage volume of the device - where we first met with memory in the standardUFS 2.0 (New Universal Flash Storage Directorate).
From the beginning of the smartphone era to the present day, almost all the smart devices were based on a memory that is NAND memory,SSD. However, it is not the same, and although the memories of the smartphones were intrinsically superior to the hard drive option (you would be surprised, but there were some esoteric smart devices that tried to integrate them), they were based on an eMMC standard with capabilities and performance that were very far from the "NAND On personal computers.
The eMMC standard has continued to evolve and improve over the years, but in practice has had difficulty offering proper random reading and writing performance - something that was noticeably reflected in actions such as opening a gallery with many large images, or slow loading into a resource-intensive game. As a result, the UFS standard was created to deliver a leap forward in the performance of tiny, cost-effective storage devices for ultra-mobile devices, and then came Samsung, one of the leaders in NAND memory production, who decided to leverage its capabilities to be First in the market Offer support for new capabilities.
and so it was - The Galaxy S6 And his brother The S6 Edge Suggested memories UFS 2.0, Which presented a significant advantage Over all eMMC memories on other smartphones, in almost every parameter and category. It's hard to say an addition Performence This was felt most notably in the standard everyday use of S6, but it was clear that there was a very positive news here.
After all this introduction, we went to the main thing - Korean SK Hynix, a significant Samsung rival in both NAND and DRAM chip manufacturing, Apple Announces Which also enters the game with its own UFS 2.0 memory. The memory in question will be 64GB, based on chips NAND In 16 nm lithography, and with up to 780 megabits per second in continuous reading, up to 160 megabits per second in continuous writing, and up to 32,000IOPS in random read and 17,000IOPS in random writing - a performance significantly better than those declared סמסונג At the time.
As you can see, these data are not quite as close to what you get on the drive SSD "Big" on your computer - but in SK Hynix Declare that it is nevertheless an 3 improvement from the performance offered by the eMMC 5.1 standard, the latest and most advanced competitor.
In addition to making UFS 2.0 memory available to all manufacturers and enabling them to advance their devices to the next level, it will also create competition that did not exist in the market - and may convince סמסונג Open its doors and offer its memories to other manufacturers in a similar way. If and when this happens, there is no doubt that other manufacturers such as SanDisk or Toshiba Show interest and enter the game.
UFS memories may not be the most urgent revolution the world of smart devices needs during this time, but it is nevertheless an important advance - and we have no doubt that within a few years we will all look back and wonder how we got along so long without internal storage Performence Are affordable on your smartphone or tablet.